Searched hist:bed338782681a71323218e4ba0705a402052ef6f (Results 1 – 4 of 4) sorted by relevance
| /rkbin/RKBOOT/ |
| H A D | RK3562MINIALL_AMP_CPU3.ini | bed338782681a71323218e4ba0705a402052ef6f Fri Jun 21 08:14:17 UTC 2024 Tang Yun ping <typ@rock-chips.com> rk3562: ddr: update ddrbin to v1.06
build from:
a2efbe6ac4 dram: adjust version format
build command:
./make.sh rk3562
update feature:
1. fix probabilistic read/write training failures under DDR4 2cs
introduced in ddrbin v1.06
2. Undo vref training below 600MHz
3. The CLK/DQS slew rate supports different values at high and low frequencies.
4. Added DRAM Manufacturer ID printing.
5. DDR4 enable LPASR to reduce DDR4 self-refresh power.
Signed-off-by: Tang Yun ping <typ@rock-chips.com>
Change-Id: I405a7505d81df18baea2abf8abcd8d2d9ce5785a
|
| H A D | RK3562MINIALL.ini | bed338782681a71323218e4ba0705a402052ef6f Fri Jun 21 08:14:17 UTC 2024 Tang Yun ping <typ@rock-chips.com> rk3562: ddr: update ddrbin to v1.06
build from:
a2efbe6ac4 dram: adjust version format
build command:
./make.sh rk3562
update feature:
1. fix probabilistic read/write training failures under DDR4 2cs
introduced in ddrbin v1.06
2. Undo vref training below 600MHz
3. The CLK/DQS slew rate supports different values at high and low frequencies.
4. Added DRAM Manufacturer ID printing.
5. DDR4 enable LPASR to reduce DDR4 self-refresh power.
Signed-off-by: Tang Yun ping <typ@rock-chips.com>
Change-Id: I405a7505d81df18baea2abf8abcd8d2d9ce5785a
|
| /rkbin/doc/release/ |
| H A D | RK3562_EN.md | bed338782681a71323218e4ba0705a402052ef6f Fri Jun 21 08:14:17 UTC 2024 Tang Yun ping <typ@rock-chips.com> rk3562: ddr: update ddrbin to v1.06
build from:
a2efbe6ac4 dram: adjust version format
build command:
./make.sh rk3562
update feature:
1. fix probabilistic read/write training failures under DDR4 2cs
introduced in ddrbin v1.06
2. Undo vref training below 600MHz
3. The CLK/DQS slew rate supports different values at high and low frequencies.
4. Added DRAM Manufacturer ID printing.
5. DDR4 enable LPASR to reduce DDR4 self-refresh power.
Signed-off-by: Tang Yun ping <typ@rock-chips.com>
Change-Id: I405a7505d81df18baea2abf8abcd8d2d9ce5785a
|
| H A D | RK3562_CN.md | bed338782681a71323218e4ba0705a402052ef6f Fri Jun 21 08:14:17 UTC 2024 Tang Yun ping <typ@rock-chips.com> rk3562: ddr: update ddrbin to v1.06
build from:
a2efbe6ac4 dram: adjust version format
build command:
./make.sh rk3562
update feature:
1. fix probabilistic read/write training failures under DDR4 2cs
introduced in ddrbin v1.06
2. Undo vref training below 600MHz
3. The CLK/DQS slew rate supports different values at high and low frequencies.
4. Added DRAM Manufacturer ID printing.
5. DDR4 enable LPASR to reduce DDR4 self-refresh power.
Signed-off-by: Tang Yun ping <typ@rock-chips.com>
Change-Id: I405a7505d81df18baea2abf8abcd8d2d9ce5785a
|